Samsung unveils V-NAND drive

Samsung Electronics has unveiled a solid state drive based on the world’s first 3D vertical NAND flash.

The world’s largest memory chip maker revealed the storage drive fitted with the V-NAND at the Flash Memory Summit 2013 in Santa Clara on Tuesday, according to industry sources.

The products used the 128GB multi-level cell three-dimensional V-NAND which recently Samsung began to mass produce. The V-NAND will help realize the same level of durability and reliability of the high-performance as solid state drives based on a single level cell.

When compared to the drives using the 20 nanometer NAND flash memory chip, the V-NAND will have optimized capacity for large-scale data centers or business servers, while the write speed was increased 20 percent and the power consumption slashed by up to 40 percent.

By Shin Ji-hye (shinjh@heraldcorp.com)